Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;
半導(dǎo)體器件動力模型的有限元法仿真與分析
Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;
半導(dǎo)體器件DPA不合格的根源研究
A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;
一類半導(dǎo)體器件模擬的Galerkin-MMOCAA方法
Accelerators simulation experiment on single event effects in semiconductor devices;
半導(dǎo)體器件單粒子效應(yīng)的加速器模擬實驗
In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.
為提高硅半導(dǎo)體器件的正向?qū)щ娞匦?文中對器件濃硼擴(kuò)散、磷擴(kuò)散和燒結(jié)鋁電極后P~+-P區(qū)摻雜濃度分布、少子壽命等因素的影響進(jìn)行了實驗研究。
They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.
GaN具有禁帶寬度大、熱導(dǎo)率高、電子飽和漂移速度大和介電常數(shù)小等特點,在高亮度發(fā)光二極管、短波長激光二極管、高性能紫外探測器和高溫、高頻、大功率半導(dǎo)體器件等領(lǐng)域有著廣泛的應(yīng)用前景。
Types,technical characteristics and applications of power semiconductor devices frequently used for locomotive and rolling stock now are presented.
介紹了目前在機(jī)車車輛變流器中常用的電力半導(dǎo)體器件的種類、技術(shù)特點及應(yīng)用范圍,著重闡述了電力半導(dǎo)體器件冷卻技術(shù)、結(jié)構(gòu)特點及其應(yīng)用范圍,對我國機(jī)車車輛變流器冷卻技術(shù)的發(fā)展提出了一些觀點。
All of various new power semiconductor devices use infegrati on technology from the microelectronics and have achieved power integration.
功率半導(dǎo)體器件主要用來控制能源和負(fù)載之間的能量流,使這種控制有很高的精度,特別快的控制時間和很小的耗散功率。
The over-heat of power semiconductors is the main reason causing the failure of power supply,so it is necessary to well process heat design to enhance the reliability of power supply.
功率半導(dǎo)體器件廣泛應(yīng)用于各種電源設(shè)備中。
fuse for protection of semiconductor device
保護(hù)半導(dǎo)體器件熔斷器
Technological Fundamentals of Semiconductor Device
半導(dǎo)體器件工藝原理
metal-oxide-semiconductor device
金屬－氧化物－半導(dǎo)體器件
semiconductor device parameter stability
半導(dǎo)體器件參數(shù)穩(wěn)定性
Course Design of Semiconductor Devices
半導(dǎo)體器件課程設(shè)計
Physics of Semiconductor Devices
《半導(dǎo)體器件物理學(xué)》
" Heat sink of semiconductor devices--Heat sink, extruded shapes"
GB/T7423.2-1987半導(dǎo)體器件散熱器型材散熱器
Heat sink for power semiconductor device
GB/T8446.1-1987電力半導(dǎo)體器件用散熱器
Heat sink of semiconductor devices--Generic specification
GB/T7423.1-1987半導(dǎo)體器件散熱器通用技術(shù)條件
Simulation on Stable-state Thermal Resistance of Sinks for Power Semiconductor Devices using the ANSYS software
用ANSYS軟件包模擬半導(dǎo)體器件散熱器穩(wěn)態(tài)熱阻
Semiconductor devices-Sectional specification for discrete devices
GB/T12560-1990半導(dǎo)體器件分立器件分規(guī)范(可供認(rèn)證用)
Electrotechnical terminology--Power semiconductor device
GB/T2900.32-1994電工術(shù)語電力半導(dǎo)體器件
complementary metal oxide semiconductor device
互補(bǔ)金屬氧化物半導(dǎo)體器件
Gold wire for semiconductor devices lead bonding
GB/T8750-1997半導(dǎo)體器件鍵合金絲
Semiconductor devices--Part 6: Thyristors
GB/T15291-1994半導(dǎo)體器件第6部分晶閘管
enhancement MOS device
增強(qiáng)型金屬氧化物半導(dǎo)體器件
Rating systems for electronic tubes and semiconductor devices
GB/T5839-1986電子管和半導(dǎo)體器件額定值制
Power Supply Miniaturization and Application of Semiconductor Devices
電源的小型化與半導(dǎo)體器件的應(yīng)用