Homogeneous , strained epitaxial SiGe films on silicon substrates were used.
在硅基板上使用了均勻、應(yīng)變的外延SiGe薄膜.
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Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry.
高質(zhì)量的外延片已經(jīng)成為中國LED產(chǎn)業(yè)發(fā)展的主要制約環(huán)節(jié).
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Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.
在半導(dǎo)體器件制造的外延工藝中,外延生長(zhǎng)時(shí)通常要摻入雜質(zhì).
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Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.
使用單片式外延爐生產(chǎn)的硅外延材料具有良好的厚度和電阻率均勻性.
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It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.
結(jié)果表明外延層具有平坦的異質(zhì)結(jié)界面和良好的晶體特性.
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The four - probe method is used on very thin samples such as epitaxial wafers and conductive coatings.
四探針法用在非常薄的樣品,例如外延晶圓片和導(dǎo)電涂層上.
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There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.
在LED生產(chǎn)過程中, 主要有外延片生長(zhǎng) 、 芯片和封裝三個(gè)環(huán)節(jié).
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And a brief description of the development of epitaxial The number of shape Combination.
并簡(jiǎn)單描述數(shù)形結(jié)合發(fā)展的外延.
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Epitaxial layers of InSb and InAs _ xSb _ ( 1 - x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.
在 ( 111 ) InSb和 ( 100 ) GaAs襯底上,用分子束外延技術(shù)生長(zhǎng)了InSb和InAs_xSb_ ( 1-x ) 外延層.
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