Carbon nanotubes were separately synthesized by a new pulsed laser ablation (PLA) for in-situ growth method and CVD support method in this paper.
為了探索制備碳納米管的新方法及其制備工藝，本文分別嘗試采用了新的脈沖激光轟擊原位生長(zhǎng)法和CVD基體法兩種方法來制備碳納米管。
The effects of adding fluorine, chlorine, phosphorus and oxygen in C - H systems and the effects of adding oxygen, fluorine in C - S systems on the chemical transport reaction in the production of carbon nanotube (CNT) via chemical vapor deposition(CVD) have been calculated by using software developed by scientists at Russian Academy of Science.
利用俄羅斯科學(xué)院研制的軟件計(jì)算分析了CVD法制備碳納米管過程中在碳?xì)潴w系添加氟、氯、磷、氧等元素及在碳硫體系中加入氧、氟等元素對(duì)于化學(xué)傳遞反應(yīng)的影響,結(jié)果表明,這些元素的加入有利于傳遞反應(yīng)的進(jìn)行。
Influences on the percentage of deposited carbon from hydrocarbon via chemical vapor deposition at 700 K to (1 500 K,)101×10~3 Pa and CO via chemical vapor deposition at 700 K to (1 200 K),101×10~3 Pa were calculated by use of the CVD (chemical vapor deposition) software developed by the scientists of Russia Academy of Science.
利用俄羅斯科學(xué)院研制的CVD(chemicalvapordeposition)軟件計(jì)算了在101×103Pa和700K～1500K烴催化熱解以及在101×103Pa和700K～1200KCO催化熱解影響碳沉積率的因素,并根據(jù)碳沉積相邊界點(diǎn)的反應(yīng)物組成繪制了碳沉積邊界曲線,預(yù)測(cè)了碳沉積區(qū),計(jì)算結(jié)果對(duì)多壁碳納米管的制備提供了有關(guān)的信息。
With TiCl4+O2 reaction system, nano-TiO2 powders were prepared by radio frequency plasma chemical vapor deposition (RF-PCVD).
采用高頻等離子體化學(xué)氣相沉積法(RF-PCVD)法,以TiCl4 + O2為反應(yīng)體系,制備出了納米級(jí)的TiO2粉體。
In this thesis,GeSi films were grown on glass substrates by PECVD.
采用等離子體CVD法在玻璃襯底上沉積 Ge Si薄膜 ,研究了不同生長(zhǎng)條件下的樣品的光學(xué)特性 ,從樣品的紫外 -可見光反射譜和透射譜計(jì)算出光學(xué)帶隙 ,發(fā)現(xiàn)隨著 Ge含量的增加 ,薄膜的光學(xué)帶隙減小。
Study on Synthesis of Carbon Nanotubes by Pulsed Laser Ablation for In-Situ Growth Method and CVD Supporting Method;
脈沖激光轟擊原位生長(zhǎng)法和CVD基體法制備碳納米管研究
The pretreatment methods of cemented carbide substrate and their effects on CVD diamond film were mainly summarized.
本文重點(diǎn)對(duì)近年硬質(zhì)合金基體表面預(yù)處理方法及其對(duì)CVD金剛石膜沉積的影響進(jìn)行了綜述。
Preparation and Characteristic of Carbon Related Wide Bandgap Semiconductor Materials Prepared by Chemical Vapor Deposition;
CVD制備碳基寬帶隙半導(dǎo)體材料及其特性研究
Synthesis and Growth Mechanism of Carbon Nanotubes on Different Substrates Through CVD Method;
CVD法在不同基底上制備碳納米管及其機(jī)制研究
Microstructure and Properties of a-Si_(1-x)C_x:H Thin Films Prepared by PECVDs;
等離子體CVD法制備a-Si_（1-x）C_x：H薄膜及其微結(jié)構(gòu)和性能研究
Effect of Dilute Gas on Performance of CVD-SiC Fibers
稀釋氣體對(duì)CVD-SiC纖維性能的影響
Effect of Gas Flow and Gas Ratio on CVD SiC Coating
氣體流量及配比對(duì)CVD SiC膜層的影響
The Fabrication of Continuous High Performance SiC Fiber by Chemical Vapor Deposition;
CVD法制備高性能SiC連續(xù)纖維技術(shù)
Computer Control System of Producing Carbon Nanotubes with CVD;
CVD法制備納米碳管的計(jì)算機(jī)控制系統(tǒng)
Simulation of Growth Process of Titania Nanoparticles Synthesized by Flame CVD Process;
火焰CVD法制備TiO_2納米顆粒的數(shù)值模擬
The Study of the Coating of Silicon Dioxide by CVD Utilizing TEOS-O_3;
CVD法采用TEOS-O_3沉積二氧化硅膜
Synthesis and Characterization of Aligned Carbon Nanotubes Prepared by CVD;
CVD法制備定向納米碳管及其表征
Technical Study on Deposition of B-C Films by MWECR CVD Method;
MWECR CVD法制備B-C薄膜的工藝研究
Preparations and Characteration of single phosphorus-doped p-type ZnO nanowire
CVD法制備單根磷摻雜P型ZnO納米線
The Analysis of CVD Process for High Purity Titanium
CVD法制備高純鈦形核過程動(dòng)力學(xué)分析
Synthesis of multiwall carbon nanotubes by decomposition of methane over vanadium container catalysts
用含釩催化劑CVD法制備多壁納米碳管
Fundamental Study on High-efficiency Polishing for CVD Diamond Thick Film;
CVD金剛石厚膜高效拋光的基礎(chǔ)研究
Simulation on the Temperature and Pressure Field of CVD Diamond Blunt Aircraft under Flight;
CVD金剛石膜鈍頭體飛行溫度與壓力的仿真研究