Ni _ 3 Al monocrystal can be prepared by means of Bridgman directionalsolidification.
采用Bridgman定向凝固 方法可以制得Ni_3Al單晶體.
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The Bridgman method is widely used in the growth of single crystals.
許多單晶半導(dǎo)體材料的垂直生長(zhǎng)都使用了Bridgman法.
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MnxCd 1 - xIn 2 Te 4 ingots were grown by Bridgman method.
本文首次采用Bridgman法生長(zhǎng) 了Mn_ xCd_(1-x) In_ 2Te_4晶體,并研究了晶體中相的形貌、結(jié)構(gòu)、成分和晶體中各組元沿軸向和徑向的成分分布.
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With the polycrystal, PbI _ 2 single crystal with size of? 15 mm ×30 mm has been grown by vertical Bridgman method.
以此為原料,用垂直Bridgman法生長(zhǎng)出尺寸為? 15mm×30mm的PbI2單晶錠.
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Single crystal of Cr ~ ( 3 + ): LiCaAlF _ 6 was grown by vertical Bridgman method from stoichiometric composition melt.
用垂直Bridgman法從化學(xué)計(jì)量比組份的熔體中長(zhǎng)出Cr~ ( 3+ ): LiCaAlF_6單晶.
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Sb doped PbWO 4 crystals have been grown by means of modified Bridgman method.
采用改進(jìn)的布里奇曼(Bridgman)法生長(zhǎng)了摻雜Sb2O3的PbWO4晶體.
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In this paper, Cr ∶ LiCAF crystal grown by the Bridgman method and its flashlamp pumped operation are reported.
本文報(bào)道了用Bridgman法生長(zhǎng)的優(yōu)質(zhì)大尺寸Cr∶LiCAF晶體及其閃光燈泵浦性能研究.
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The Bridgman method was used in the vertical growth of single crystal semiconducting materials.
單晶半導(dǎo)體材料的垂直生長(zhǎng)都使用了Bridgman法.
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Growth of KCl : Sr ￣ ( 2 + ) crystal by RAP - Bridgman method is reported in this paper.
本文采用反應(yīng)氣氛布里奇曼法生長(zhǎng)了KCl:Sr~ ( 2+ ) 晶體.
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An analysis for the growth process of PbI 2 single crystal by bridgman method has been made.
本文分析了用布里奇曼法生長(zhǎng)碘化鉛單晶體的結(jié)晶過(guò)程.
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Several types of macro - defects existed in the BGO crystal grown by the Bridgman method.
下降法生長(zhǎng)的BGO晶體中存在幾種典型的 宏觀 缺陷.
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Large size CaF _ 2 crystal has been grown by the Bridgman - Stockbarger method using a graphite crucible.
采用真空坩堝下降法在石墨坩堝中生長(zhǎng)了大尺寸CaF_2晶體.
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High purity NaCl single crystals have been obtained by areactive atmosphere processing ( RAP ) based on the Bridgman technique.
本文使用反應(yīng)氣氛法(ReactiveAtmosphere Processing 簡(jiǎn)稱RAP ) Bri-dgman技術(shù) 生長(zhǎng)高純NaCl單晶體.
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